-
1. Back-grinding tape for silicon, GaN, and sapphire|Tape …
Link: https://www.furukawa.co.jp/uvtape/en/technology/backgrinding.html
Description: WEBSuitable for thin wafer grinding caused by stress relaxation. Good for detaping. Suitable for various device. Characteristics. SP Series for silicon wafers. (note) Data shown above are typical values and not guaranteed …
-
2. Explore further
Link: https://www.furukawa.co.jp/uvtape/en/technology/uvtape.html
Description:
-
3. Furukawa Review(No.29) : R&D : FURUKAWA ELECTRIC
Link: https://www.furukawa.co.jp/review/fr029/fr29_01.htm
Description: WEBAbstract. GaN electron devices are expected to contribute significantly toward efficiency improvement and downsizing of power supplies since the devices have the potential of …
-
4. Furukawa Electric Licenses GaN Patents to Transphorm and …
Link: https://eepower.com/news/furukawa-electric-licenses-gan-patents-to-transphorm-and-makes-investment/
Description: WEBMay 13, 2014 · Transphorm Inc. today announced that it has obtained a sole worldwide license to Furukawa Electric Co., Ltd. 's extensive Gallium Nitride (GaN) power device …
-
5. Furukawa Gan (古川がん) - MyDramaList
Link: https://mydramalist.com/people/104177-furukawa-gan
Description: WEBFurukawa Gan. Name: Furukawa Gan; Native name: 古川がん; Nationality: Japanese; Gender: Male; Born: September 13, 1944; Age: 79
-
6. A Novel GaN Device with Thin AlGaN/GaN …
Link: https://www.furukawa.co.jp/review/fr029/fr29_01.pdf
Description: WEBA Novel GaN Device with Thin AlGaN/GaN Heterostructure for High-power Applications. by Nariaki Ikeda *, Jiang Li *, Sadahiro Kato *, Mitsuru Masuda * and Seikoh Yoshida * … Author: Nariaki Ikeda, Jiang Li, Sadahiro Kato, Mitsuru Masuda, Seikoh Yoshida Publish Year: 2006
Author: Nariaki Ikeda, Jiang Li, Sadahiro Kato, Mitsuru Masuda, Seikoh YoshidaPublish Year: 2006
-
7. Transphorm obtains exclusive licensing rights to …
Link: https://www.prnewswire.com/news-releases/transphorm-obtains-exclusive-licensing-rights-to-furukawa-electrics-gallium-nitride-gan-patent-portfolio-259154941.html
Description: WEBGOLETA, Calif., May 13, 2014 /PRNewswire/ -- Transphorm Inc. today announced that it has obtained a sole worldwide license to Furukawa Electric Co., Ltd.'s extensive …
-
8. Gan Furukawa - IMDb
Link: https://www.imdb.com/name/nm6184665/
Description: WEBGan Furukawa is known for Perfect Days (2023), Kaizoku Sentai: Ten Gokaiger (2021) and Avataro Sentai Donbrothers (2022). Add photos, demo reels. Add to list. More at …
-
9. arXiv:2003.06988v1 [cs.CV] 16 Mar 2020
Link: https://arxiv.org/pdf/2003.06988.pdf
Description: WEBHouse-GAN: Relational Generative Adversarial Networks for Graph-constrained House Layout Generation. Nelson Nauata1, Kai-Hung Chang2, Chin-Yi Cheng2, Greg Mori1, …
-
10. Growth of bulk GaN crystals | Journal of Applied Physics - AIP …
Link: https://pubs.aip.org/aip/jap/article/128/5/050902/595963/Growth-of-bulk-GaN-crystals
Description: WEBAug 5, 2020 · Three basic crystal growth technologies, halide vapor phase epitaxy, sodium flux, and ammonothermal, are described. Their advantages and disadvantages, recent …
-
11. House-GAN++: Generative Adversarial Layout Refinement Networks
Link: https://ar5iv.labs.arxiv.org/html/2103.02574
Description: WEBAbstract. This paper proposes a novel generative adversarial layout refinement network for automated floorplan generation. Our architecture is an integration of a graph-constrained …